摘 要 文章介绍了作者所在实验室在巨磁电阻(GMR)、隧穿磁电阻(TMR)、庞磁电阻(CMR)和反铁磁钉扎薄膜材料以及单晶金属氧化物、高自旋极化率材料、P\|N异质结和纳米环磁随机存储器原理型演示器件设计等研究方面取得的一些重要研究成果和进展.例如：在Al\|O势垒磁性隧道结材料体系里，获得室温磁电阻超过80%的国际最好结果；获得两种高性能层状反铁磁钉扎材料体系；发现具有大的电致电阻效应的CMR薄膜材料，并可期望用于电流直接进行磁信息写和读操作的磁存储介质；发现双势垒磁性隧道结中的量子阱态共振隧穿和磁电阻振荡效应，以及纳米器件体系中自旋翻转长度的观测新方法，可用于新型自旋电子学材料及相关器件的人工辅助设计；利用电子自旋共振谱探测和研究了金属氧化物的微观自旋结构和各向异性；在［CoFe/Pt］n磁性金属多层膜中，观测到超高灵敏度的反常霍尔效应；利用纳米环状磁性隧道结作为存储单元，研制出一种新型纳米环磁随机存储器MRAM原理型演示器件.
Spintronic materials, physics and device designs
(State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences,Beijing 100190, China)
AbstractRecently, in the State Key Laboratory of Magnetism amorphous Al\|O barrier based magnetic\|tunnel\|junctions (MTJs) with ring\|shaped structures and a tunneling magnetic resonance ratio of 80% at room temperature were micro\|fabricated. High ordered FePt and antiferromagnetic (Cr25Mn25)Pt50 thin films with good thermal stability and high coercivity were also synthesized. Large current\|induced resistance effects in colossal magnetic resonance thin films was observed. A new method was designed to observe spin flip scattering in the nanometer sized spacer layer near the ballistic limit based on MTJs. An important first\|principles study of quantum well (QW) states and QW\|resonance tunneling in the symmetric epitaxial Fe(001)/MgO/Fe/MgO/Fe double barrier MTJ was performed. Electron spin resonance spectra was successfully used to investigate the interlayer exchange coupling and anisotropic spin structures in layered transition metal oxides. An ultrahigh sensitivity Hall effect was observed in CoFe/Pt multilayers via manipulation of the perpendicular interface anisotropy due to the strong spin\|orbit interaction of Pt. Nano\|ring MTJs and 4×4 bit nano\|ring magnetic random access memory (MRAM) demo devices were fabricated with spin\|polarized current (spin transfer torque) switching, which may open a new way for developing MRAM devices.